Sequential observation of electroless copper deposition via noncontact atomic forte microscopy

被引:26
作者
Ng, HT [1 ]
Li, SFY
Chan, L
Loh, FC
Tan, KL
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 119260, Singapore
[2] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore
[3] Chartered Semicond Mfg Ltd, Res & Dev, Singapore 738406, Singapore
[4] Natl Univ Singapore, Dept Phys, Surface Sci Lab, Singapore 119260, Singapore
关键词
D O I
10.1149/1.1838800
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The dynamic morphological evolution of electroless copper deposition on palladium-activated high density physical vapor deposited TiN and oxide passivated TiN has been studied via noncontact atomic force microscopy. With precise control of the vibrational amplitude and resonant frequency of the cantilever probe, submicrometer length scale images were sequentially acquired for the deposition process. The different substrates are associated with two different growth schemes, although in both cases, lateral growth across the substrate dominated over vertical growth during the initial nucleation stage, which was followed by three-dimensional,growth. In the case of TiN, simultaneous nucleation of Cu nodules on Pd nucleation catalyst and TiN grains was observed in the initial nucleation stages. However, only deposition of Cu grains on Pd catalyst was found in the case of oxide passivated TiN. Nevertheless, both growth schemes eventually lead to the formation of continuous Cu films.
引用
收藏
页码:3301 / 3307
页数:7
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