Erbium luminescence in suboxide films derived from triethoxysilane

被引：11

作者：

De Castro, MJ

Pivin, JC

机构：

[1] CSIC, Inst Opt Daza Valdes, E-28006 Madrid, Spain

[2] Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2003年 / 28卷 / 01期

关键词：

photoluminescence; nanoparticles; ion implantation;

D O I：

10.1023/A:1025628901923

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanoclusters formed in triethoxysilane during annealing at temperatures above 900degreesC are used for increasing the excitation cross section of Er atoms. A stronger sensitization of the Er luminescence is observed, for a given Er concentration, when the Er3+ ions are introduced in the matrix by ion implantation than when adding a salt to the precursor solution, because of a better dispersion of the implanted atoms. The logarithmic increase of the emission yield with the Er concentration up to 1 at% which is found in the case of implanted samples is ascribed to the quenching processes by interaction between neighbour Er3+ ions.

引用

收藏

页码：37 / 43

页数：7

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