Very large dielectric response of thin ferroelectric films with the dead layers

被引:118
作者
Bratkovsky, AM
Levanyuk, AP
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, CIII, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 13期
关键词
D O I
10.1103/PhysRevB.63.132103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the dielectric response of ferroelectric (FE) thin films with the "dead" dielectric layer at the interface with electrodes. The domain structure inevitably forms in the FE film in the presence of the dead layer. As a result, the effective dielectric constant of the capacitor epsilon (ff) increases abruptly when the dead layer is thin and, consequently, the pattern of 180 degrees domains becomes "soft." We compare the exact results for this problem with the description in terms of a popular "capacitor" model, which is shown to give qualitatively incorrect results. We relate the present results to fatigue observed in thin ferroelectric films.
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