Shape evolution of Ge/Si(001) islands induced by strain-driven alloying

被引：27

作者：

Huang, CJ ^{[1
]}

Zuo, YH ^{[1
]}

Li, DZ ^{[1
]}

Cheng, BW ^{[1
]}

Luo, LP ^{[1
]}

Yu, JZ ^{[1
]}

Wang, QM ^{[1
]}

机构：

[1] Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 24期

关键词：

D O I：

10.1063/1.1379361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The shape evolution of Ge/Si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. We find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. While at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. The presence of the atomic intermixing between the Ge islands and Si substrate at high deposition rate is responsible for the reverse evolution. (C) 2001 American Institute of Physics.

引用

页码：3881 / 3883

页数：3

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