Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

被引：7

作者：

Aqariden, F ^{[1
]}

Shih, HD ^{[1
]}

Turner, AM ^{[1
]}

Liao, PK ^{[1
]}

机构：

[1] DRS Infrared Technol LP, Dallas, TX 75374 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 06期

关键词：

HgCdTe; MBE; defect reduction;

D O I：

10.1007/BF02665875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study on preparation of Cd0.96Zn0.04Te(211)B substrates for growth of Hg1-xCdxTe epitaxial layers by molecular beam epitaxy (MBE) was investigated. The objective was to investigate the impact of starting substrate surface quality on surface defects such as voids and hillocks commonly observed on MBE Hg1-xCdxTe layers. The results of this study indicate that, when the Cd0.96Zn0.04Te(211)B substrates are properly prepared, surface defects on the resulting MBE Hg1-xCdxTe films are reduced to minimum (size similar to0.1 mum and density similar to 500/cm(2)), so that these MBE Hg1-xCdxTe films have surface quality as good as that of liquid phase epitaxial (LPE) Hg1-xCdxTe films currently in production in this laboratory.

引用

页码：794 / 796

页数：3

共 4 条

[1] Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy [J].