Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy

被引:4
作者
Aqariden, F
Shih, HD
Liao, PK
Duncan, WM
Dat, R
机构
[1] DRS Infrared Technol, LP, Dallas, TX 75374 USA
[2] Univ Illinois, Microphys Lab, Chicago, IL 60607 USA
[3] Texas Instruments Inc, Digital Imaging Technol Dev, Plano, TX 75086 USA
[4] Raytheon Syst Co, Dallas, TX 75243 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期
关键词
D O I
10.1116/1.591389
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Real-time composition control using spectral (or spectroscopic) ellipsometry (SE) in the growth of long-wavelength infrared (LWIR) Hg1-xCdxTe (x similar to 0.225) on Cd0.96Zn0.04Te(211) B by molecular beam epitaxy (MBE) was investigated. Excellent compositional reproducibility among the 10 LWIR Hg1-xCdxTe growth runs was demonstrated with the aid of SE, with the average composition being x = 0,225 acid the standard deviation in x being 0.00042, the lowest figure that has ever been reported. The ability of MBE to switch from one composition to another on demand and with first pass success using SE is also demonstrated. (C) 2000 American Vacuum Society. [S0734-211X(00)04203-7].
引用
收藏
页码:1381 / 1384
页数:4
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