Effects of defects and doping on wide band gap ferromagnetic semiconductors

被引：48

作者：

Pearton, SJ

Abernathy, CR

Thaler, GT

Frazier, R

Ren, F

Hebard, AF

Park, YD

Norton, DP

Tang, W

Stavola, M

Zavada, JM

Wilson, RG

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] USA, Res Off, Res Triangle Pk, NC 27709 USA

[3] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[4] Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea

[5] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[6] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

defects; doping; ferromagnetism; wide band gap; semiconductors;

D O I：

10.1016/j.physb.2003.09.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Both ion implantation and epitaxial crystal growth provide convenient methods of introducing transition metals such as Mn,Cr,Fe,Ni and Co into GaN, GaP, SiC and ZnO for creating dilute magnetic semiconductors exhibiting room temperature ferromagnetism. In this paper we review progress in wide band gap ferromagnetic semiconductors and the role of defects and doping on the resulting magnetic properties. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：39 / 47

页数：9

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