Direct determination of the interaction between vacancies on InP(110) surfaces

被引：59

作者：

Ebert, P ^{[1
]}

Chen, X ^{[1
]}

Heinrich, M ^{[1
]}

Simon, M ^{[1
]}

Urban, K ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN, MADISON, WI 53706 USA

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.76.2089

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interaction potential between charged P vacancies on InP(110) surfaces is determined from scanning tunneling microscopy measurements of their correlation. It is found to have a functional form of a screened Coulomb potential except at very short distances. A vacancy charge of +1e is derived from the measurements. The maximum repulsion is 65 meV and the range is 3 nm.

引用

页码：2089 / 2092

页数：4

共 21 条

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