THEORY OF RELATIVE NATIVE-DEFECT AND IMPURITY-DEFECT ABUNDANCES IN COMPOUND SEMICONDUCTORS AND THE FACTORS THAT INFLUENCE THEM

被引：111

作者：

JANSEN, RW ^{[1
]}

SANKEY, OF ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.39.3192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3192 / 3206

页数：15

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