Dielectric anomaly in strontium bismuth tantalate thin films

被引：36

作者：

Takemura, K ^{[1
]}

Noguchi, T ^{[1
]}

Hase, T ^{[1
]}

Miyasaka, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have succeeded in observing the dielectric anomaly in ferroelectric strontium bismuth tantalate (SBT) thin films, and studied how it varies with film composition. For a stoichiometric SBT film, the dielectric anomaly was diffused, and the Curie temperature (T-c) was approximately 260 degrees C, which is lower than that for the bulk ceramic. A SBT film with excess Bi composition showed T-c of approximately 300 degrees C, and T-c for Sr deficient SBT films was higher than 340 degrees C. The composition dependence of remanent polarization and coercive field near room temperature for the SBT films reflects the composition dependence of the T-c values. (C) 1998 American Institute of Physics.

引用

页码：1649 / 1651

页数：3

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