Silicon-on-diamond: An advanced silicon-on-insulator technology

被引：27

作者：

Aleksov, A

Li, X

Govindaraju, N

Gobien, JM

Wolter, SD

Prater, JT

Sitar, Z

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Army Res Off, Res Triangle Pk, NC 27709 USA

来源：

关键词：

silicon-on-diamond (SOD); heaters; IR-imaging; 3D-FE;

D O I：

10.1016/j.diamond.2005.01.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75-100 mu m thick and serves as an electrical insulator, heat spreader and substrate. In this paper, we focus on the thermal evaluation of SOD with a Si device layer on the nucleation side of the diamond film. The obtained results indicated that SOD can sustain up to 10-times higher power loads than SOL The results were experimentally obtained by R(T) measurements of micro-heaters deposited on the Si device layer and by thermal imaging. 3D finite element thermal simulations using ANSYS confirmed that these numbers are in good agreement with expectations. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：308 / 313

页数：6

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