Well-Defined Nanostructured, Single Crystalline TiO2 Electron Transport Layer for Efficient Planar Perovskite Solar Cells

被引:208
作者
Choi, Jongmin [1 ]
Song, Seulki [1 ]
Horantner, Maximilian T. [2 ]
Snaith, Henry J. [2 ]
Park, Taiho [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, San 31, Kyungbuk 790784, South Korea
[2] Univ Oxford, Dept Phys, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England
基金
英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词
perovskite; solar cell; electron transport layer; TiO2; nanostructures; anodization; NANOTUBE ARRAYS; ANOMALOUS HYSTERESIS; HALIDE PEROVSKITES; LOW-TEMPERATURE; DYE; NANOPARTICLES; DIFFUSION; TRIHALIDE; MECHANISM;
D O I
10.1021/acsnano.6b01575
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An electron transporting layer (ETL) plays an important role in extracting electrons from a perovskite layer and blocking recombination between electrons in the fluorine-doped tin oxide (FTO) and holes in the perovskite layers, especially in planar perovskite solar cells. Dense TiO2 ETLs prepared by a solution processed spin-coating method (S-TiO2) are mainly used in devices due to their ease of fabrication. Herein, we found that fatal morphological defects at the S-TiO2 interface due to a rough FTO surface, including an irregular film thickness, discontinuous areas, and poor physical contact between the S-TiO2 and the FTO layers, were inevitable and lowered the charge transport properties through the planar perovskite solar cells. The effects of the morphological defects were mitigated in this work using a TiO2 ETL produced from sputtering and anodization. This method produced a well-defined nanostructured TiO2 ETL with an excellent transmittance, single-crystalline properties, a uniform film thickness, a large effective area, and defect-free physical contact with a rough substrate that provided outstanding electron extraction and hole blocking in a planar perovskite solar cell. In planar perovskite devices, anodized TiO2 ETL (A-TiO2) increased the power conversion efficiency by 22% (from 12.5 to 15.2%), and the stabilized maximum power output efficiency increased by 44% (from 8.9 to 12.8%) compared with S-TiO2. This work highlights the importance of the ETL geometry for maximizing device performance and provides insights into achieving ideal ETL morphologies that remedy the drawbacks observed in conventional spin-coated ETLs.
引用
收藏
页码:6029 / 6036
页数:8
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