Monolithic active pixel sensor realized in SOI technology-concept and verification

被引：8

作者：

Niemiec, H

Bulgheroni, A

Caccia, M

Grablec, P

Grodner, M

Jastrzab, M

Kucewicz, W

Kucharski, K

Kuta, S

Marczewski, J

Sapor, M

Tomaszewski, D

机构：

[1] Univ Sci & Technol, Inst Elect, PL-30059 Krakow, Poland

[2] Univ Insubria, Dipartimento Matemat & Fis, Como, Italy

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 7-8期

关键词：

D O I：

10.1016/j.microrel.2004.10.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details. (c) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1202 / 1207

页数：6

共 9 条

[1]

Berst JD, 2000, CERN REPORT, V2000, P535

[2]

BROENNIMANN C, 2003, 12 INT WORKSH VERT D

[3] Silicon Ultra fast Cameras for electron and γ sources In Medical Applications [J].

Caccia, M ;

Airoldi, A ;

Alemi, M ;

Amati, M ;

Badano, L ;

Bartsch, V ;

Berst, D ;

Bianchi, C ;

Bol, H ;

Bulgheroni, A ;

Cannillo, F ;

Cappellini, C ;

Czermak, A ;

Claus, G ;

Colledani, C ;

Conte, L ;

Deptuch, G ;

de Boer, W ;

Dierlamm, A ;

Domanski, K ;

Dulinski, W ;

Dulny, B ;

Ferrando, O ;

Grigoriev, E ;

Grabiec, P ;

Lorusso, R ;

Jaroszewicz, B ;

Jungermann, L ;

Kucewicz, W ;

Kucharski, K ;

Kuta, S ;

Leo, G ;

Machowski, W ;

Marczewski, J ;

Mondry, G ;

Niemiec, H ;

Novario, R ;

Paolucci, L ;

Pezzetta, M ;

Popowski, Y ;

Riester, JL ;

Sampietro, C ;

Sapor, M ;

Schweickert, H ;

Spanò, B ;

Tomaszewski, D ;

Zalewska, A .

NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 2003, 125 :133-138

[4] AN OVERVIEW OF CMOS-SOI TECHNOLOGY AND ITS POTENTIAL USE IN PARTICLE-DETECTION SYSTEMS [J].

COLINGE, JP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 305 (03) :615-619

[5]

CZERMAK A, 2003, 8 ICATPP C ASTR PART

[6] INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS [J].

DIERICKX, B ;

WOUTERS, D ;

WILLEMS, G ;

ALAERTS, A ;

DEBUSSCHERE, I ;

SIMOEN, E ;

VLUMMENS, J ;

AKIMOTO, H ;

CLAEYS, C ;

MAES, H ;

HERMANS, L ;

HEIJNE, EHM ;

JARRON, P ;

ANGHINOLFI, F ;

CAMPBELL, M ;

PENGG, FX ;

ASPELL, P ;

BOSISIO, L ;

FOCARDI, E ;

FORTI, F ;

KASHIGIN, S ;

MEKKAOUI, A ;

HABRARD, MC ;

SAUVAGE, D ;

DELPIERRE, P .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (04) :753-758

[7]

marshall A., 2001, SOI DESIGN ANALOG ME

[8]

Niemiec H., 2003, Proceedings of the 10th International Conference Mixed Design of Integrated Circuits and Systems. MIXDES 2003, P508

[9] Trends in pixel detectors: Tracking and Imaging [J].

Wermes, N .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (03) :1006-1015

← 1 →