Interface formation and electronic structure of α-sexithiophene on ZnO

被引：31

作者：

Blumstengel, S. ^{[1
]}

Koch, N. ^{[1
]}

Sadofev, S. ^{[1
]}

Schaefer, P. ^{[1
]}

Glowatzki, H. ^{[1
]}

Johnson, R. L. ^{[2
]}

Rabe, J. P. ^{[1
]}

Henneberger, F. ^{[1
]}

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[2] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

关键词：

D O I：

10.1063/1.2918089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface formation between the organic semiconductor alpha-sexithiophene (6T) and polar as well as nonpolar ZnO surfaces is investigated. The growth mode of the organic layer is strongly influenced by the orientation of the ZnO surface. No indication for chemisorption of 6T on ZnO is found by photoelectron spectroscopy. The energy level alignment at the 6T/ZnO interface is of type-II facilitating electron transfer from the organic to the inorganic part and hole transfer in the other direction, rendering this heterostructure interesting for photovoltaic applications. (C) 2008 American Institute of Physics.

引用

页数：3

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[11] Spontaneous dissociation of a conjugated molecule on the Si(100) surface [J].