High-cycle fatigue and durability of polycrystalline silicon thin films in ambient air

被引:135
作者
Muhlstein, CL
Brown, SB
Ritchie, RO
机构
[1] Univ Calif Berkeley, LBNL, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Exponent Inc, Natick, MA 01760 USA
关键词
fatigue; stress-life; durability; silicon; polysilicon; MEMS;
D O I
10.1016/S0924-4247(01)00709-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To evaluate the long-term durability proper-ties of materials for microelectromechanical systems (MEMS), the stress-life (SIN) cyclic fatigue behavior of a 2-mum thick polycrystalline silicon film was evaluated in laboratory air using an electrostatically actuated notched cantilever beam resonator. A total of 28 specimens were tested for failure under high frequency (similar to 40 kHz) cyclic loads with lives ranging from about 10 s to 34 days (3 x 10(5) to 1.2 x 10(11) cycles) over fully reversed, sinusoidal stress amplitudes varying from similar to2.0 to 4.0 GPa. The thin-film polycrystalline silicon cantilever beams exhibited a time-delayed failure that was accompanied by a continuous increase in the compliance of the specimen. This apparent cyclic fatigue effect resulted in an endurance strength, at greater than 10(9) cycles, of similar to2 GPa, i.e. roughly one-half of the (single cycle) fracture strength. Based on experimental and numerical results, the fatigue process is attributed to a novel mechanism involving the environmentally-assisted cracking of the surface oxide film (termed reaction-layer fatigue). These results provide the most comprehensive, high-cycle, endurance data for designers of polysilicon micromechanical components available to date. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:177 / 188
页数:12
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