Formation of ZnS/SiO2 nanocables -: art. no. 173111

被引:23
作者
Fan, X [1 ]
Meng, XM
Zhang, XH
Wu, SK
Lee, ST
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100101, Peoples R China
[2] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[4] Chinese Acad Sci, Grad Sch, Beijing 100101, Peoples R China
关键词
D O I
10.1063/1.1919394
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanometer-sized coaxial cables with a single-crystal ZnS core and a thin amorphous SiO2 shell were synthesized by simple thermal evaporation in vacuum. As-fabricated ZnS/SiO2 nanocables were studied using scanning electron microscopy, x-ray diffraction and transmission electron microscopy. The ZnS/SiO2 nanocables have diameters of similar to 50 nm, lengths of several tens of micrometers, and shell thickness of similar to 4 nm. The core of the nanocable has a wurtzite structure with a growth direction along [001]. The nanocables show strong photoluminescence with two peaks related to band gap and defect-related emission. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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