ZnS nanowires with wurtzite polytype modulated structure

被引：189

作者：

Jiang, Y

Meng, XM

Liu, J

Hong, ZR

Lee, CS

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Hefei Univ Technol, Dept Mat Sci & Engn, Hefei, Anhui, Peoples R China

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 14期

关键词：

D O I：

10.1002/adma.200304852

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel polytype modulated ID structure has been grown in ZnS nanowires via intermittent laser ablation-catalytic growth. The polytype modulated ZnS nanowires show a strong blue-shifted bandgap emission centered at 338.2 nm due to quantum size effects. The Figure shows a dark-field image of one of the nanowires (top) and the corresponding electron diffraction patterns (bottom).

引用

页码：1195 / +

页数：5

共 54 条

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