Texture of IBAD TiN films as a function of ion-beam intensity and angular incidence

被引:24
作者
Alberts, L
Leutenecker, R
Wolf, GK
机构
[1] FRAUNHOFER INST FESTKORPERTECHNOL,D-80686 MUNICH,GERMANY
[2] UNIV HEIDELBERG,INST PHYS CHEM,D-69129 HEIDELBERG,GERMANY
关键词
IBAD; TiN; biaxial orientation; texture;
D O I
10.1016/S0257-8972(95)02747-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Because of the directionality of the ion beam, the coating of complex-shaped samples with the IBAD method will result in different growth conditions of the surface film. A study of variations of the ion-beam incidence angle and I/A ratio reveals inhomogeneous film microstructures. Interesting effects of ''ion-channelling'' on the crystallographic orientation of the him crystallites are shown. Complete biaxial orientations of the films are achieved with a beam incidence of about 45 degrees. Orientation changes occur as a function of the ion-beam intensity. Complex interactions of surface and/or strain energy minimization and the channelling-orientation effect are believed to be responsible for these findings.
引用
收藏
页码:443 / 447
页数:5
相关论文
共 10 条
[1]  
ALBERTS L, 1995, THESIS U POITIERS
[2]   ION-BEAM-INDUCED TEXTURE FORMATION IN VACUUM-CONDENSED THIN METAL-FILMS [J].
DOBREV, D .
THIN SOLID FILMS, 1982, 92 (1-2) :41-53
[3]   GROWTH OF THIN-FILMS WITH PREFERENTIAL CRYSTALLOGRAPHIC ORIENTATION BY ION-BOMBARDMENT DURING DEPOSITION [J].
ENSINGER, W .
SURFACE & COATINGS TECHNOLOGY, 1994, 65 (1-3) :90-105
[4]   COMPETITION BETWEEN STRAIN AND INTERFACE ENERGY DURING EPITAXIAL GRAIN-GROWTH IN AG FILMS ON NI(001) [J].
FLORO, JA ;
THOMPSON, CV ;
CAREL, R ;
BRISTOWE, PD .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (09) :2411-2424
[5]   EFFECTS OF STRAIN-ENERGY ON THE PREFERRED ORIENTATION OF TIN THIN-FILMS [J].
OH, UC ;
JE, JH .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1692-1696
[6]   ON THE RESIDUAL-STRESS AND PICO-STRUCTURE OF TITANIUM NITRIDE FILMS .2. A PICO-STRUCTURAL MODEL [J].
PERRY, AJ ;
VALVODA, V ;
RAFAJA, D .
VACUUM, 1994, 45 (01) :11-14
[7]   AVERAGE ENERGY DEPOSITED PER ATOM - A UNIVERSAL PARAMETER FOR DESCRIBING ION-ASSISTED FILM GROWTH [J].
PETROV, I ;
ADIBI, F ;
GREENE, JE ;
HULTMAN, L ;
SUNDGREN, JE .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :36-38
[8]   ION-BOMBARDMENT DURING THIN-FILM DEPOSITION AND ITS INFLUENCE ON MECHANICAL AND CHEMICAL SURFACE-PROPERTIES [J].
WOLF, GK ;
ENSINGER, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :173-181
[9]   EQUIPMENT FOR ION-BEAM ASSISTED DEPOSITION [J].
WOLF, GK ;
ZUCHOLL, K ;
BARTH, M ;
ENSINGER, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :570-573
[10]   ATOMIC CHEMICAL-COMPOSITION AND REACTIVITY OF THE TIC(111) SURFACE [J].
ZAIMA, S ;
SHIBATA, Y ;
ADACHI, H ;
OSHIMA, C ;
OTANI, S ;
AONO, M ;
ISHIZAWA, Y .
SURFACE SCIENCE, 1985, 157 (2-3) :380-392