Modification of H2-sensitive breakdown voltages of SnO2 varistors with noble metals

被引:26
作者
Shimizu, Y
Kanazawa, E
Takao, Y
Egashira, M
机构
[1] Nagasaki Univ, Fac Engn, Dept Mat Sci & Engn, Nagasaki 8528521, Japan
[2] Nagasaki Univ, Fac Environm Studies, Dept Environm Studies, Nagasaki 8528521, Japan
关键词
SnO2; nonlinear I-V characteristics; varistor; noble metal sensitizer; double Schottky barrier;
D O I
10.1016/S0925-4005(98)00253-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Effects of noble metals on the H-2-sensitive nonlinear I-V characteristics of SnO2 varistors have been investigated. All the SnO2 varistors exhibited nonlinear I-V characteristics in air at 300-600 degrees C. The breakdown voltage shifted to a lower electric field upon exposure to 1.0% H-2 at elevated temperatures, thus exhibiting H-2 sensitivity. It was found that SnO2 varistors loaded with a noble metal such as Au, Pt, and Pd exhibited a higher breakdown voltage than a pure SnO2 varistor in air. The increase in the breakdown voltage in air arose mainly from the electronic interaction based on the difference between the electron affinity of SnO2 and the work function of the metal loaded. Effects of noble metals on the H-2 sensitivity were strongly dependent on the kind of noble metals. Addition of Au resulted in an increase in sensitivity owing to 'chemical sensitization', but Pt and Pd caused a decrease in sensitivity due to 'configurational effect' associated with their high catalytic activities. Among the varistors tested, SnO2 loaded with 0.1 wt% Au exhibited the largest H-2-sensitive breakdown voltage shift at 300 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:38 / 44
页数:7
相关论文
共 25 条
  • [1] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES
    BUTLER, MA
    GINLEY, DS
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 228 - 232
  • [2] Hydrogen-sensitive breakdown voltage in the I-V characteristics of tin dioxide-based semiconductors
    Egashira, M
    Shimizu, Y
    Takao, Y
    Fukuyama, Y
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1996, 33 (1-3) : 89 - 95
  • [3] EGASHIRA M, 1993, ELECTROCHEM SOC US P, V937, P35
  • [4] APPLICATION OF ZINC-OXIDE VARISTORS
    GUPTA, TK
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (07) : 1817 - 1840
  • [5] Ihokura K, 1981, NEW MATERIALS NEW PR, V1, P43
  • [6] ZINC-OXIDE VARISTOR GAS SENSORS .1. EFFECT OF BI2O3 CONTENT ON THE H-2-SENSING PROPERTIES
    LIN, FC
    TAKAO, Y
    SHIMIZU, Y
    EGASHIRA, M
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (09) : 2301 - 2306
  • [7] PREPARATION AND H-2 SENSING PROPERTIES OF ZNO VARISTOR GAS SENSORS
    LIN, FC
    TAKAO, Y
    SHIMIZU, Y
    EGASHIRA, M
    [J]. DENKI KAGAKU, 1993, 61 (08): : 1021 - 1022
  • [8] LIN FC, 1995, SENSOR ACTUAT B-CHEM, V24, P843
  • [9] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR
    LUNDSTROM, KI
    SHIVARAMAN, MS
    SVENSSON, CM
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3876 - 3881
  • [10] Matsuoka M., 1971, JPN J APPL PHYS, V10, P737