Nonlinear optics in silicon waveguides: Stimulated Raman scattering and two-photon absorption

被引:9
作者
Dimitropoulos, D [1 ]
Claps, R [1 ]
Han, Y [1 ]
Jalali, B [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Optoelect Circuits & Syst Lab, Los Angeles, CA 90024 USA
来源
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VII | 2003年 / 4987卷
关键词
D O I
10.1117/12.474363
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon-On-Insulator integrated optics boasts low loss waveguides and tight optical confinement necessary for the design of nanophotonic devices. In addition, the processing is fully compatible with capabilities of standard silicon foundries. Because of crystal symmetry, silicon does not possess 2(nd) order nonlinear optical effects. However, the combination of nanoscale geometries with the high refractive index contrast creates high optical intensities where 3(rd) order effects may become important, and in fact, may be exploited. In this context, we study the two main nonlinear processes that can occur in silicon waveguides, namely Stimulated Raman Scattering (SRS) from zone-center optical phonons and Two-Photon Absorption (TPA). Because of the single crystal structure, the Raman gain coefficient in silicon is several orders of magnitude larger than that in the (amorphous) glass fiber while its bandwidth is limited to approximately 100GHz. To achieve Raman gain in the 1550nm region requires the pump to be centered at around 1427nm. We discuss the Raman selection rules in a silicon waveguide and present the design of an SOI Raman amplifier. We show that by causing pump depletion, TPA can limit the amount of achievable Raman gain. TPA also limits the maximum optical SNR of the silicon amplifier.
引用
收藏
页码:140 / 148
页数:9
相关论文
共 18 条
  • [1] Cardona M., 1982, LIGHT SCATTERING SOL
  • [2] Observation of Raman emission in silicon waveguides at 1.54 μm
    Claps, R
    Dimitropoulos, D
    Han, Y
    Jalali, B
    [J]. OPTICS EXPRESS, 2002, 10 (22): : 1305 - 1313
  • [3] Stimulated Raman scattering in silicon waveguides
    Claps, R
    Dimitropoulos, D
    Jalali, B
    [J]. ELECTRONICS LETTERS, 2002, 38 (22) : 1352 - 1354
  • [4] ABSOLUTE CROSS-SECTION FOR RAMAN-SCATTERING BY PHONONS IN SILICON
    GRIMSDITCH, M
    CARDONA, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (01): : 155 - 161
  • [5] Kuo J. B., 2001, LOW VOLTAGE SOI CMOS
  • [6] Naydenkov M., 1999, P IEEE INT SOI C OCT, P56
  • [7] SPONTANEOUS-RAMAN-SCATTERING EFFICIENCY AND STIMULATED SCATTERING IN SILICON
    RALSTON, JM
    CHANG, RK
    [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1858 - &
  • [8] OPTICAL LIMITING IN SEMICONDUCTORS
    RALSTON, JM
    CHANG, RK
    [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 164 - &
  • [9] INDIRECT 2-PHOTON TRANSITIONS IN SI AT 1.06MUM
    REINTJES, JF
    MCGRODDY, JC
    [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (19) : 901 - 903
  • [10] RESONANT RAMAN-SCATTERING IN SILICON
    RENUCCI, JB
    TYTE, RN
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3885 - 3895