Memory effect in a molecular quantum dot with strong electron-vibron interaction

被引:95
作者
Alexandrov, AS
Bratkovsky, AM
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Univ Loughborough, Dept Phys, Loughborough LE11 3TU, Leics, England
关键词
D O I
10.1103/PhysRevB.67.235312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polaron theory of tunneling through a molecular quantum dot (MQD) with strong electron-vibron interactions and attractive electron-electron correlations is developed. The dot is modeled as a d-fold-degenerate energy level weakly coupled to the leads. The effective attractive interaction between polarons in the dot results in a "switching" phenomenon in the current-voltage characteristics when d>2, in agreement with the results for the phenomenological negative-U model. The degenerate MQD with strong electron-vibron coupling has two stable current states in a certain interval of the bias voltage below some critical temperature.
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页数:8
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