Internal temperature distribution measurements in high power semiconductor lasers

被引:9
作者
O'Brien, P [1 ]
O'Callaghan, J [1 ]
McInerney, J [1 ]
机构
[1] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland
关键词
D O I
10.1049/el:19981004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel technique to measure internal temperature distributions within high power semiconductor lasers with substrates transparent to the laser radiation is presented. The temperature resolution is better than 1 degrees C with a spatial resolution of 1-2 mu m. The results show highly non-uniform transverse temperature distributions and significant heating close to the facet at high output powers.
引用
收藏
页码:1399 / 1401
页数:3
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