Imaging of curved facet unstable resonator semiconductor lasers operating at 980 nm

被引：7

作者：

O'Brien, P ^{[1
]}

Moorhouse, C

Braddell, J

McInerney, J

机构：

[1] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland

[2] Natl Univ Ireland Univ Coll Cork, Natl Ctr Electron Microscopy, Cork, Ireland

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 06期

关键词：

D O I：

10.1049/el:19980462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique is presented for imaging the interior of high power semiconductor lasers and amplifiers based on viewing the scattered spontaneous emission from the active region through the substrate. To demonstrate its potential the authors have fabricated novel unstable resonator semiconductor lasers using a dry-etch process and successfully imaged the optical field distribution including an internal focal point.

引用

页码：561 / 562

页数：2

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