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Semiconductor amplifiers and lasers with tapered gain regions

被引：219
作者：
Walpole, JN
机构：
[1] Massachusetts Institute of Technology, Lincoln Laboratory, Lexington
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1996年 / 28卷 / 06期
关键词：
D O I：
10.1007/BF00411298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconductor amplifiers and lasers with tapered gain regions provide the highest-brightness all-semiconductor sources of near infrared continuous wave (CW) power and have many useful applications. Simple models of these devices are described. Their applications, device performance and brightness limitations are reviewed.
引用
收藏
页码：623 / 645
页数：23
相关论文
共 95 条
[1]   INJECTION BEHAVIOR AND MODELING OF 100-MW BROAD AREA DIODE-LASERS [J].
ABBAS, GL ;
YANG, S ;
CHAN, VWS ;
FUJIMOTO, JG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) :609-617
[2]  
ABELES JH, 1992, P 13 IEEE INT SEM LA, P33
[3]  
ABELES JH, 1993, P SOC PHOTO-OPT INS, V1850, P49
[4]  
ABELES JH, 1993, OPTICAL DESIGN PHOTO, V9
[5]   SPATIOTEMPORAL CHAOS IN BROAD-AREA SEMICONDUCTOR-LASERS [J].
ADACHIHARA, H ;
HESS, O ;
ABRAHAM, E ;
RU, P ;
MOLONEY, JV .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (04) :658-665
[6]   1 GBIT/S COHERENT OPTICAL COMMUNICATION-SYSTEM USING A 1-W OPTICAL POWER-AMPLIFIER [J].
ALEXANDER, SB ;
KINTZER, ES ;
LIVAS, JC ;
WALPOLE, JN ;
WANG, CA ;
MISSAGGIA, LJ ;
CHINN, SR .
ELECTRONICS LETTERS, 1993, 29 (01) :114-115
[7]   HIGH-POWER AND HIGH-SPATIAL-COHERENCE BROAD-AREA POWER-AMPLIFIER [J].
ANDREWS, JR ;
SCHUSTER, GL .
OPTICS LETTERS, 1991, 16 (12) :913-915
[8]   SPATIO-SPECTRAL CHARACTERISTICS OF A HIGH-POWER, HIGH-BRIGHTNESS CW INGAAS/ALGAAS UNSTABLE RESONATOR SEMICONDUCTOR-LASER [J].
BAO, Z ;
DEFREEZ, RK ;
CARLESON, PD ;
LARGENT, C ;
MOELLER, C ;
DENTE, GC .
ELECTRONICS LETTERS, 1993, 29 (18) :1597-1599
[9]   GAIN SATURATION AND PROPAGATION CHARACTERISTICS OF INDEX-GUIDED TAPERED-WAVE-GUIDE TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS (TTW-SLAS) [J].
BENDELLI, G ;
KOMORI, K ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (02) :447-458
[10]   A NEW STRUCTURE FOR HIGH-POWER TW-SLA [J].
BENDELLI, G ;
KOMORI, K ;
ARAI, S ;
SUEMATSU, Y .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (01) :42-44
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