Effects of niobium doping on the piezoelectric properties of sol-gel-derived lead-zirconate-titanate films

被引:28
作者
Kwok, KW [1 ]
Tsang, RCW
Chan, HLW
Choy, CL
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Ctr Mat Res, Kowloon, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1635968
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sol-gel-derived lead-zirconate-titanate (PZT) films doped with various amounts of niobium (Nb) have been spin coated on silicone substrates, and their remanent polarization P-r, and effective longitudinal and transverse piezoelectric coefficients (d(33,c) and e(31,c)) as well as the pyroelectric coefficient p, have been measured. The Zr/Ti ratio of the films is 53/47. Our results reveal that the Nb-dopant effects on the PZT films are very similar to the experimentally known effects on the corresponding bulk ceramics, i.e., enhancing both the longitudinal and transverse piezoelectric properties. However, because of the substrate clamping effect, the exact enhancement in the longitudinal piezoelectric properties cannot be evaluated by the d(33,c) measurement on the film samples. Accordingly, the observed d(33,c) value of the Nb-doped PZT films remains almost unchanged while the observed -e(31,c) (as well as P-r and p) increases with increasing Nb concentration, showing an optimum Nb concentration of 2 mol %. For the PZT film doped with 2% Nb, the observed values of P-r, d(33,c), -e(31,c), and p are about 30 muC/cm(2), 95 pm/V, 18 C/m2, and 350 muC/m(2) K, respectively. (C) 2004 American Institute of Physics.
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页码:1372 / 1376
页数:5
相关论文
共 16 条
[1]   Switching properties of Pb(Nb, Zr, Ti)O3 capacitors using SrRuO3 electrodes [J].
Aggarwal, S ;
Jenkins, IG ;
Nagaraj, B ;
Kerr, CJ ;
Canedy, C ;
Ramesh, R ;
Velasquez, G ;
Boyer, L ;
Evans, JT .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1787-1789
[2]   MEASUREMENT OF THE PYROELECTRIC COEFFICIENT IN COMPOSITES USING A TEMPERATURE-MODULATED EXCITATION [J].
DIAS, C ;
SIMON, M ;
QUAD, R ;
DASGUPTA, DK .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (01) :106-110
[3]   Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films [J].
Dubois, MA ;
Muralt, P .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 77 (02) :106-112
[4]  
Haccart I, 2003, THIN SOLID FILMS, V423, P235
[5]   Evaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O3 thin films [J].
Haccart, T ;
Cattan, E ;
Remiens, D ;
Hiboux, S ;
Muralt, P .
APPLIED PHYSICS LETTERS, 2000, 76 (22) :3292-3294
[6]  
Jaffe B., 1971, Piezoelectric Ceramics
[7]   Interferometric measurements of electric field-induced displacements in piezoelectric thin films [J].
Kholkin, AL ;
Wutchrich, C ;
Taylor, DV ;
Setter, N .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (05) :1935-1941
[8]  
Kohli M, 1999, FERROELECTRICS, V225, P961
[10]  
KWOK KW, 1997, THESIS HONG KONG POL