Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system

被引：19

作者：

Bielejec, E ^{[1
]}

Seamons, JA ^{[1
]}

Reno, JL ^{[1
]}

Lilly, MR ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.1871340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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