Material aspects of spin injection in semiconductors

被引：9

作者：

Borghs, G ^{[1
]}

DeBoeck, J ^{[1
]}

机构：

[1] Imec, Dept Adv Components & Sensors Syst, Louvain, Belgium

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 84卷 / 1-2期

关键词：

conductivity; spin scattering length; ferromagnetic metals;

D O I：

10.1016/S0921-5107(01)00573-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conductivity and spin scattering length of materials forming the ferromagnetic- semiconductor junction can reduce spin injection strongly when the difference is large. A ferromagnetic metal on top of a semiconductor is for that reason not necessarily the best choice and a magnetic semiconductor may be better. We will discuss the properties of GaMnAs as a possible candidate and we also present a ballistic injection device as an alternative solution. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：75 / 80

页数：6

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