Evaluation of vacuum bonded GaAs/Si spin-valve transistors

被引：10

作者：

Dessein, K

Boeve, H

Kumar, PSA

De Boeck, J

Lodder, JC

Delaey, L

Borghs, G

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept MTM, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, Dept ESAT, B-3001 Heverlee, Belgium

[4] ISTG, Mesa Res Inst, NL-7500 AE Enschede, Netherlands

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%. (C) 2000 American Institute of Physics. [S0021-8979(00)71408-3].

引用

页码：5155 / 5157

页数：3

共 11 条

[1]

CARTERCOMAN C, 1997, J ELECTROCHEM SOC, V144, pL29

[2]

DESSEIN K, 1999, P 29 EUR SOL STAT DE

[3] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS [J].