ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 406 - 421

[2] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801

[3] SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2): : 115 - 144

[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[5] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[6] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[7] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[8] BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[9] BUCHER HK, 1973, APPL PHYS LETT, V23, P617, DOI 10.1063/1.1654768

[10] TUNABLE BARRIER HEIGHTS AND BAND DISCONTINUITIES VIA DOPING INTERFACE DIPOLES - AN INTERFACE ENGINEERING TECHNIQUE AND ITS DEVICE APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1245 - 1251

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 406 - 421

[2] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801

[3] SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2): : 115 - 144

[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[5] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[6] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[7] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[8] BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[9] BUCHER HK, 1973, APPL PHYS LETT, V23, P617, DOI 10.1063/1.1654768

[10] TUNABLE BARRIER HEIGHTS AND BAND DISCONTINUITIES VIA DOPING INTERFACE DIPOLES - AN INTERFACE ENGINEERING TECHNIQUE AND ITS DEVICE APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1245 - 1251