OHMIC CONTACTS TO GAAS

被引：54

作者：

BRASLAU, N

机构：

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(83)90581-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：391 / 397

页数：7

共 22 条

[1]

[Anonymous], SEMICOND SEMIMET

[2] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].

BARNES, PA ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653

[3] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[4] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+

[5] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[6] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[7] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[8] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[9] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&

[10]

DILL FH, 1981, COMMUNICATION

← 1 2 3 →