Cubic single-crystalline Si1-x-yCxNy films with mirror face prepared by RTCVD

被引：9

作者：

Ting, SF ^{[1
]}

Fang, YK

Hsieh, WT

Tsair, YS

Chang, CN

Lin, CS

Hsieh, MC

Chiang, HC

Ho, JJ

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan, Taiwan

[2] Fortune Inst Technol, Dept Elect Engn, Kaohsiung, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 11期

关键词：

D O I：

10.1149/1.1405995

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reports the growth of single-crystalline silicon carbon nitride (Si1-x-yCxNy) films on crystal silicon substrate using C3H8 for carbon source by rapid thermal chemical vapor deposition (RTCVD). Based on the scanning electron microscope analysis, the Si1-x-yCxNy films are smooth on the surface and at the Si1-x-yCxNy/Si interface, which is important for device applications. A model to explain the growing mechanism of the Si1-x-yCxNy film is being proposed. (C) 2001 The Electrochemical Society.

引用

页码：G91 / G93

页数：3

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