Electrical and optical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

被引：53

作者：

Ubale, A. U. ^{[1
]}

Daryapurkar, A. S. ^{[1
]}

Mankar, R. B. ^{[1
]}

Raut, R. R. ^{[1
]}

Sangawar, V. S. ^{[1
]}

Bhosale, C. H. ^{[2
]}

机构：

[1] Govt Vidarbha Inst Sci & Human, Amravati 444604, India

[2] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2008年 / 110卷 / 01期

关键词：

thin film; electrical and optical properties;

D O I：

10.1016/j.matchemphys.2008.01.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2S3 thin films were prepared on amorphous glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using bismuth nitrate and thioacetamide as the cationic and anionic precursors in aqueous medium. The X-ray diffraction study reveals that as-deposited films of Bi2S3 are amorphous in nature, it becomes polycrystalline after annealing at 573 K. The decrease in activation energy from 0.65 to 0.36 eV and optical band gap energy, E-g, from 2.35 to 1.86 eV are observed as film thickness varies from 67 to 150 nm. Such changes are attributed to the quantum size effect in semiconducting films. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：180 / 185

页数：6

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