CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS FROM THIOACETAMIDE BATH

Bi2S3 thin films have been deposited from an aqueous acidic bath using thioacetamide CH3-CS-NH2 (TAM) as a sulfide ion source. The preparative parameters are optimized and growth mechanism is discussed. X-ray diffractograms indicate that the films are polycrystalline in nature. A microstructural study has been carried out using a scanning electron microscopy technique. From optical absorption studies the energy bandgap of Bi2S3 is estimated to be 1.84 eV. Room temperature resistivity is of the order of 10(5) ohm cm.