Chromium diffusion in gallium arsenide

被引：8

作者：

Khludkov, SS ^{[1
]}

Koretskaya, OB ^{[1
]}

Tyazhev, AV ^{[1
]}

机构：

[1] Kuznetsov Physicotech Inst, Tomsk 634050, Russia

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1682323

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Chromium diffusion in GaAs was studied by measuring the thickness of high-resistivity layers formed during diffusion of chromium (a deep acceptor) in n-GaAs. The dependence of the chromium diffusivity in GaAs on the temperature, arsenic-vapor pressure, conductivity type, and carrier density was determined. The temperature dependence of the diffusivity is described by the Arrhenius equation with the parameters D-0=8x10(9) cm(2)/s and E=4.9 eV. The dependence of the diffusivity on the arsenic-vapor pressure is described by the expression D proportional to P-As4(-m), where m approximate to 0.4. The experimental data obtained are interpreted in terms of the concept of the dissociative mechanism of migration of Cr atoms in GaAs. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：262 / 265

页数：4

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