GaAs structures for X-ray imaging detectors

被引：21

作者：

Ayzenshtat, GI

Bakin, NN

Budnitsky, DL

Drugova, EP

Germogenov, VP

Khludkov, SS

Koretskaya, OB

Okaevich, LS

Porokhovnichenko, LP

Potapov, AI

Smith, KM

Tolbanov, OP

Tyazhev, AV

Vilisova, MD

Vorobiev, AP

机构：

[1] Siberian Phys Tech Inst, Tomsk 634050, Russia

[2] Semicond Devices Res Inst, Sci & Prod State Enterprise, Tomsk, Russia

[3] Tomsk State Univ, Tomsk 634050, Russia

[4] Univ Glasgow, Glasgow, Lanark, Scotland

[5] Sci State Ctr, Inst High Energy Phys, Moscow, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 466卷 / 01期

关键词：

SI-GaAs; deep impurities; ionizing detectors; X-rays;

D O I：

10.1016/S0168-9002(01)00820-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high-resistive layers, their electrophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of technological methods are analyzed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：25 / 32

页数：8

共 15 条

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BEAMONT SP, 1994, NUCL INSTRUM METH A, V342, P83

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