Transport and charge collection in compensated GaAs particle detectors

被引:3
作者
Koretskaya, OB [1 ]
Okaevich, LS [1 ]
Potapov, AI [1 ]
Tolbanov, OP [1 ]
机构
[1] SIBERIAN INST PHYS & TECHNOL,TOMSK,RUSSIA
关键词
D O I
10.1016/0168-9002(96)00686-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
High resistivity pi-nu-n structures are shown to differ significantly from traditional drift detectors. It has been found that the amount of charge formed by a minimum ionizing particle (mip) in these structures does not depend on the bias. We consider this phenomenon to be associated with the relaxation properties of these structures because tau(d) >> tau(0).
引用
收藏
页码:409 / 410
页数:2
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