Current-mode CMOS image sensor using lateral bipolar phototransistors

被引：15

作者：

Huang, Y ^{[1
]}

Hornsey, RI

机构：

[1] Rockwell Semicond, Thousand Oaks, CA 91358 USA

[2] York Univ, N York, ON M3J 1P3, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

active pixel sensors; CMOS image sensors; current-mode; lateral bipolar phototransistors (LPT);

D O I：

10.1109/TED.2003.820123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A current-mode image sensor has been designed using current mirrors with amplifying device ratios. Prototype sensors have been fabricated in a standard 0.18-mum CMOS technology. Image capture is demonstrated from two 70 x 48 pixel arrays, using photodiodes and lateral bipolar phototransistors as the photodetectors. The latter type displays a reduced fixed pattern noise, while linearity is similar to that of the photodiode pixel. The lateral bipolar phototransistor pixels also show a greater response in the red region of the visible spectrum.

引用

页码：2570 / 2573

页数：4

共 11 条

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