Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence

被引：33

作者：

Ferdos, F ^{[1
]}

Sadeghi, M

Zhao, QX

Wang, SM

Larsson, A

机构：

[1] Chalmers Univ Technol, Photon Lab, Microtechnol Ctr, Dept Microelect ED, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Phys, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

nanostructures; molecular beam epitaxy; semiconducting gallium arsenide; laser diodes;

D O I：

10.1016/S0022-0248(01)01003-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a study of the optimised growth conditions for InAs quantum dots (QDs) grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). Growth conditions for best luminescence intensity and linewidth were found within narrow windows of substrate temperature (500 520 degreesC) and nominal InAS layer thickness (3.3-3.7 monolayers). The emission wavelength of such InAs QDs capped by GaAs was around 1.24 mum. However. this is redshifted to 1.3 mum or more by capping the InAs QDs with a thin layer of InxGa1-xAs. The results show that both In content and thickness of the capping layer can be used to tune the emission wavelength. Atomic force microscopy images show that the surface recovers to two-dimensional when depositing In0.2Ga0.8As while remaining three-dimensional when depositing In0.4Ga0.6As. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1140 / 1145

页数：6

共 15 条

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