Electrode-induced degradation of Pb(ZrxTi1-x)O-3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors

被引:122
作者
KushidaAbdelghafar, K
Miki, H
Torii, K
Fujisaki, Y
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
关键词
D O I
10.1063/1.117956
中图分类号
O59 [应用物理学];
学科分类号
摘要
One of the most serious forms of damage that occurs during the integration of Pt/PZT/Pt ferroelectric capacitors [where PZT is Pb(ZrxTi1-x)O-3] is the disappearance of polarization hysteresis characteristics during the passivation process. The hydrogen content of the atmosphere during this process affects the ferroelectric capacitor characteristics. However, the PZT film itself is not damaged by annealing in a hydrogen-containing atmosphere even at 400 degrees C, whereas the Pt/PZT/Pt ferroelectric capacitor loses its polarization hysteresis characteristics at 300 degrees C. The top Pt electrode was found to induce this damage. Possible mechanisms such as stress and a chemical reaction with the Pt catalyst are discussed. (C) 1996 American Institute of Physics.
引用
收藏
页码:3188 / 3190
页数:3
相关论文
共 8 条
  • [1] BASE ELECTRODES FOR HIGH DIELECTRIC-CONSTANT OXIDE MATERIALS IN SILICON TECHNOLOGY
    GRILL, A
    KANE, W
    VIGGIANO, J
    BRADY, M
    LAIBOWITZ, R
    [J]. JOURNAL OF MATERIALS RESEARCH, 1992, 7 (12) : 3260 - 3265
  • [2] THE DEGRADATION OF FERROELECTRIC PROPERTIES OF PZT THIN-FILMS DUE TO PLASMA DAMAGE
    ISHIHARA, K
    ISHIKAWA, T
    HAMADA, K
    ONISHI, S
    KUDO, J
    SAKIYAMA, K
    [J]. INTEGRATED FERROELECTRICS, 1995, 6 (1-4) : 301 - 307
  • [3] KHAMANKER R, 1994, P 1994 INT EL DEV M, P337
  • [4] KOIKE H, 1996, P 1996 IEE EINT SOL, P368
  • [5] ONISHI S, 1994, P 1994 INT EL DEV M, P843
  • [6] THERMODYNAMIC THEORY OF SINGLE-CRYSTAL LEAD TITANATE WITH CONSIDERATION OF ELASTIC BOUNDARY-CONDITIONS
    ROSSETTI, GA
    UDAYAKUMAR, KR
    HAUN, MJ
    CROSS, LE
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) : 3334 - 3338
  • [7] TAKEMURA K, 1992, 4TH P INT S INT FERR, P481
  • [8] Tanabe N, 1995, 1995 SYMPOSIUM ON VLSI TECHNOLOGY, P123, DOI 10.1109/VLSIT.1995.520888