THE DEGRADATION OF FERROELECTRIC PROPERTIES OF PZT THIN-FILMS DUE TO PLASMA DAMAGE

被引：28

作者：

ISHIHARA, K

ISHIKAWA, T

HAMADA, K

ONISHI, S

KUDO, J

SAKIYAMA, K

机构：

[1] Sharp Corporation IC Group Ichinomoto, Tenri

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of ferroelectric properties of PZT films due to plasma damage were investigated. Hysteresis loop and leakage current of PZT films were measured before and after plasma exposure and plasma etching. The damage related defects equivalent to positive charge and neutral traps were introduced into PZT films. Recovery of the plasma damage required annealing at 550 degrees C. The influence of deposition damage of SiO2 using TEOS-O-3 also was investigated.

引用

页码：301 / 307

页数：7

共 3 条

[1] PLATINUM ETCHING AND PLASMA CHARACTERISTICS IN RF MAGNETRON AND ELECTRON-CYCLOTRON-RESONANCE PLASMAS
NISHIKAWA, K
KUSUMI, Y
OOMORI, T
HANAZAKI, M
NAMBA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6102 - 6108
[2] POOR MR, 1990, MATER RES SOC SYMP P, V200, P211, DOI 10.1557/PROC-200-211
[3] REACTIVE ION ETCHING OF SPUTTERED PBZR1-XTIXO3 THIN-FILMS
SAITO, K
CHOI, JH
FUKUDA, T
OHUE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9A): : L1260 - L1262

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