REACTIVE ION ETCHING OF SPUTTERED PBZR1-XTIXO3 THIN-FILMS

被引：45

作者：

SAITO, K

CHOI, JH

FUKUDA, T

OHUE, M

机构：

[1] Hitachi Research Laboratory, Hitachi Ltd, Hitachi-shi Ibaraki, 319-12

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期

关键词：

PBZR1-XTIXO3; RIE; DRY ETCHING; CCL4; SPUTTER;

D O I：

10.1143/JJAP.31.L1260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion etching (RIE) by CCl4 plasma of sputtered PbZr1-xTixO3 (PZT) thin film has been investigated. The etching rate of the as-deposited pyrochlore phase PZT is comparable to that of perovskite which was crystallized by 600-degrees-C annealing. Etching rate increased with increasing RF power and reached a plateau at 1.0 W/cm2. Highly anisotropic etching of PZT with little resist damage could be realized by reducing RF power.

引用

页码：L1260 / L1262

页数：3

共 4 条

[1] CHARACTERISTICS OF DOMAIN IN TETRAGONAL PHASE PZT CERAMICS [J].