High voltage (450 V) GaN schottky rectifiers

被引：141

作者：

Bandic, ZZ ^{[1
]}

Bridger, PM

Piquette, EC

McGill, TC

Vaudo, RP

Phanse, VM

Redwing, JM

机构：

[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

[2] Epitronics, Danbury, CT 06810 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm(2) and a saturation current density of 10(-5) A/cm(2) at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2+/-0.7) X 10(6) V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects. (C) 1999 American Institute of Physics. [S0003-6951(99)02409-2].

引用

页码：1266 / 1268

页数：3

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