Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser deposition

被引:220
作者
Ohnishi, T
Lippmaa, M
Yamamoto, T
Meguro, S
Koinuma, H
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Univ Tokyo, Dep Adv Mat Sci, Grad Sch Frontier Sci, Kashiwa, Chiba 2778581, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[4] Combinatorial Mat Explorat & Technol, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.2146069
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pulsed laser deposition (PLD) is a good method for growing high-quality functional oxide thin films because of the technical simplicity and the ease with which deposition can be switched from one material to another. However, the repeatability of film quality is often hard to achieve, especially when using several different PLD systems. Here we report the steps that we have taken to grow nearly bulk-equivalent defect-free thin films, with SrTiO3 as an example, by using PLD in a reproducible fashion. The ablation laser fluence was found to have a very strong effect on the lattice constant and defect structure of the films. Nonstoichiometric transfer of material from the ablation target was observed when either the laser fluence or the beam spot area was inadequate. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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