Reliability of AlInAs/InGaAs/InP HEMT with WSi ohmic contacts

被引：4

作者：

Sasaki, H

Yajima, K

Yoshida, N

Ishida, T

Hattori, R

Sonoda, T

Ishihara, O

Takamiya, S

Konishi, R

Ando, K

机构：

[1] MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICES LAB,ITAMI,HYOGO 664,JAPAN

[2] TOTTORI UNIV,FAC ENGN,TOTTORI 680,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 04期

关键词：

AlInAs/InGaAs/InP HEMT; degradation; EDX; life test; ohmic contact; WSi; X-TEM;

D O I：

10.1007/BF02666503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the degradation mechanism of Al0.48In0.52As/In0.53Ga0.47As/InP high electron mobility transistors (HEMTs) using WSi ohmic electrodes. Cross-sectional transmission electron microscopy (TEM) observation and energy dispersive x-ray (EDX) analysis reveal impurities diffusion of gate electrode (titanium: Ti) and fluorine (F) in the AlInAs layer after a high temperature (T-a = 170 degrees C operating life test for 500 h. The decrease of drain current (I-ds) during life test shows linear dependence on square root of aging time. It suggests that the degradation is controlled by a diffusion mechanism. Hence, the estimated degradation mechanism of this device is related with decrease of carrier concentration in the epitaxial layer by these diffused impurities. On the other hand, TEM and EDX show no degradation of WSi/InGaAs interface after aging. Therefore, the WSi electrode for this type of HEMT demonstrates excellent high stability under the accelerated operating life test.

引用

页码：559 / 563

页数：5

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