Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation

被引：17

作者：

Komarov, F ^{[1
]}

Gaiduk, P ^{[1
]}

Kamarou, A ^{[1
]}

机构：

[1] Belarusian State Univ, Inst Appl Phys Problems, Minsk 220064, BELARUS

来源：

VACUUM | 2001年 / 63卷 / 04期

关键词：

A(m)B(v) semiconductors; heavy ions; high-energy implantation; radiation damage; defects; thermal spikes; tracks;

D O I：

10.1016/S0042-207X(01)00254-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs and InP wafers were irradiated by swift Kr+ and Xe+ with various ion fluences. The implantation was carried out at liquid nitrogen temperature (LNT), room temperature (RT) and higher temperature. Then the samples were investigated by means of the cross-section transmission electron microscopy (XTEM) as well as Rutherford backscattering (RBS) and selective chemical etching/microscopy (SCEM) techniques. GaAs and InP appeared to have a different character of defect accumulation with the ion dose. XTEM studies allowed identification of amorphous track formation in InP. Microparticles of wurtzite InP phase were found in some tracks. A new approach to describe the above mentioned effect was discussed. It is suggested that both fast heating and quenching of local excited regions along ion paths result in imperfect local recrystallization and, therefore, are responsible for track formation. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：657 / 663

页数：7

共 4 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].