Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

被引：341

作者：

Gómez-Navarro, C

De Pablo, PJ

Gómez-Herrero, J

Biel, B

Garcia-Vidal, FJ

Rubio, A

Flores, F

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[3] Univ Pais Vasco UPV EHU, Dept Fis Mat, E-20018 San Sebastian, Spain

[4] Donostia Int Phys Ctr, E-20018 San Sebastian, Spain

来源：

NATURE MATERIALS | 2005年 / 4卷 / 07期

关键词：

D O I：

10.1038/nmat1414

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Production of a uniform density of defects by applying Ar+ irradiation doses to single-walled nanotubes (SWNT), is discussed. After each dose, the room-temperature resistance versus SWNT length along the nanotube is measured. It was observed that there was an exponential dependence on SWNT length indicating that the system is with in the strong Anderson localization regime. It was observed that mainly di-vacancies contribute to the resistance increase induced by irradiation, and just a 0.03% of di-vacancies produces an increase of three orders of magnitude in resistance of a SWNT of 400 nm length.

引用

页码：534 / 539

页数：6

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