Progress, demands and prospects for advanced ion beam processing

被引：10

作者：

Yamada, I ^{[1
]}

机构：

[1] Kyoto Univ, Ion Beam Engn Expt Lab, Sakyo Ku, Kyoto 60601, Japan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期

关键词：

advanced ion beam processing; materials processing;

D O I：

10.1016/S0254-0584(98)00112-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Continuing demands for new and improved materials and structures are pushing ion beam technology further towards its limits in terms of ion energy, ion dose, deposited energy density and processing temperature and wafer size. This paper reviews recent large-scale projects funded by the Japanese government on advanced ion beam technologies. Several emerging ion beam technologies for advanced material processing are also reviewed. Some of the important problems and requirements in materials processing for future R&D are elucidated and discussed. Emphasis has been placed on semiconductor doping, etching and deposition. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：5 / 14

页数：10

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