Optical constants of transparent ZnO films by RF magnetron sputtering

被引:20
作者
Huang, Bo [1 ,2 ]
Li, Jing [1 ,2 ]
Wu, Yue-bo [3 ]
Guo, Dong-hui [2 ]
Wu, Sun-tao [1 ]
机构
[1] Xiamen Univ, Prn Tung Sah MEMS Res Ctr, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO; thin films; optical materials and properties; nonlinear programming; heat treatment;
D O I
10.1016/j.matlet.2007.08.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transparent ZnO films were deposited on quartz glass slides by RF magnetron sputtering and then the films are annealed at 500, 700, 900 degrees C for 60 min in pure O-2, The optical transmission spectra for the as-grown and annealed ZnO films have been measured over the 300 nm to 700 nm spectral region. The optical constants and thickness of the films have been determined using a nonlinear programming method suggested by Birgin et al. The optical band gap has been determined from the absorption coefficient. The optical quality of ZnO films is improved by annealing. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1316 / 1318
页数:3
相关论文
共 16 条
[1]   Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].
Alivov, YI ;
Özgür, Ü ;
Dogan, S ;
Johnstone, D ;
Avrutin, V ;
Onojima, N ;
Liu, C ;
Xie, J ;
Fan, Q ;
Morkoç, H .
APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3
[2]   Study of optical properties of some sol-gel derived films of ZnO [J].
Bandyopadhyay, S ;
Paul, GK ;
Sen, SK .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 71 (01) :103-113
[3]   Estimation of the optical constants and the thickness of thin films using unconstrained optimization [J].
Birgin, EG ;
Chambouleyron, I ;
Martínez, JM .
JOURNAL OF COMPUTATIONAL PHYSICS, 1999, 151 (02) :862-880
[4]   Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering [J].
Chu, SY ;
Water, W ;
Liaw, JT .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2003, 23 (10) :1593-1598
[5]   Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film [J].
Gupta, V ;
Mansingh, A .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1063-1073
[6]   INTERFERENCE-FREE DETERMINATION OF THE OPTICAL-ABSORPTION COEFFICIENT AND THE OPTICAL GAP OF AMORPHOUS-SILICON THIN-FILMS [J].
HISHIKAWA, Y ;
NAKAMURA, N ;
TSUDA, S ;
NAKANO, S ;
KISHI, Y ;
KUWANO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :1008-1014
[7]   ZnO-channel thin-film transistors: Channel mobility [J].
Hoffman, RL .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5813-5819
[8]  
JINZHONG W, 2002, CHINESE PHYS LETT, V19, P581
[9]  
Kim SH, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1862772, 10.1063/1.1839285]
[10]   Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J].
Lin, BX ;
Fu, ZX ;
Jia, YB .
APPLIED PHYSICS LETTERS, 2001, 79 (07) :943-945