Visualization of horizontally-aligned single-walled carbon nanotube growth with 13C/12C isotopes

被引:31
作者
Ago, Hiroki [1 ,2 ]
Ishigami, Naoki [1 ]
Yoshihara, Naoki [1 ]
Imamoto, Kenta [1 ]
Akita, Seiji [2 ]
Ikeda, Ken-ichi [1 ]
Tsuji, Masaharu [1 ]
Ikuta, Tatsuya [3 ]
Takahashi, Koji [3 ]
机构
[1] Kyushu Univ, Grad Sch Engn Sci, Inst Mat Chem & Engn, Fukuoka 8168580, Japan
[2] Osaka Prefecture Univ, Dept Phys & Electron, Japan Sci & Technol Agcy, PRESTO, Osaka 5998531, Japan
[3] Kyushu Univ, Grad Sch Engn, Fukuoka 8190395, Japan
关键词
D O I
10.1021/jp709737q
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on single-crystal surfaces has attracted great interest in terms of nanoelectronic applications, but their growth mechanism is not fully understood. We report on the C-13/C-12 isotope-labeled growth of SWNTs on a sapphire surface to visualize their growth process. Switching carbon feedstock from (CH4)-C-13 to (CH4)-C-12 during SWNT growth induces a gradient distribution of the carbon isotopes along the tube axis. From the Raman mapping analysis, we succeeded to observe the gradual change in the isotope distribution of individual SWNTs. The results indicate the base-growth mode for the horizontally aligned SWNTs, which suggests that nanotube-sapphire interaction is essential to alignment. This method offers a unique technique to analyze the nanotube growth mechanism and kinetics.
引用
收藏
页码:1735 / 1738
页数:4
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