Bandgap and effective mass of epitaxial cadmium oxide

被引：149

作者：

Jefferson, P. H. ^{[1
]}

Hatfield, S. A. ^{[1
]}

Veal, T. D. ^{[1
]}

King, P. D. C. ^{[1
]}

McConville, C. F. ^{[1
]}

Zuniga-Perez, J. ^{[2
]}

Munoz-Sanjose, V. ^{[2
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Valencia, Dept Fis Aplicada & Electromagnetismo, E-46100 Burjassot, Spain

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2833269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16 +/- 0.02 eV and 0.21 +/- 0.01m(0) respectively. (c) 2008 American Institute of Physics.

引用

页数：3

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